June 29, 2023 10:00 PM Eastern Daylight Time SEOUL, South Korea–(BUSINESS WIRE)–Samsung Electronics Co., Ltd., the world leader in semiconductor technology, today announced that it has started initial production of its 3-nanometer (nm) process node applying Gate-All-Around (GAA) transistor architecture.

Multi-Bridge-Channel FET (MBCFET™), Samsung’s GAA technology implemented for the first time ever, defies the performance limitations of FinFET, improving power efficiency by reducing the supply voltage level, while also enhancing performance by increasing drive current capability.